PART |
Description |
Maker |
MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
MP4210 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER From old datasheet system Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M68732UH 68732UH |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M68701 68701 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER / 820-851MHz / 6W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M68731L 68731L |
From old datasheet system SILICON MOS FET POWER AMPLIFIER / 135-155MHz / 7W / FM PORTABLE RADIO RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M68710EL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER 290-330MHz 2W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK1310A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
TOSHIBA
|